Light-emitting semiconductor device and method of fabrication
US7087933B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2004 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Nov 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode has a semiconductor region for production of light. The semiconductor region is a lamination of two complementary layers, an n-type semiconductor layer, an active layer, a p-type semiconductor layer, another complementary layer, and an ohmic contact layer, in that order from a first major surface of the semiconductor layer, from which the light is emitted, toward a second. A reflective metal layer covers the second major surface of the semiconductor region via a transparent layer for reflecting the light that has traveled through the transparent layer from the semiconductor region. The transparent layer serves to prevent the semiconductor region and the reflective layer from alloying by heat treatments during the manufacture of the LED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.