Patent · US Expired

Process for manufacturing semiconductor device and semiconductor device

US7087945B2 · kind B2 · utility

5Cited by
6References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 8, 2004
Grant dateAug 8, 2006
Priority date
Expiry dateJan 8, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F77/413

Abstract

A process for manufacturing a semiconductor device comprising the steps of: forming a transparent film on a semiconductor substrate including a photoelectric conversion section, the transparent film having a concave portion above the photoelectric conversion section; forming a material film on the transparent film, the material film being made of a photosensitive material having a refractive index higher than that of the transparent film; and irradiating selectively a predetermined portion of the material film with rays, and then developing the material film, whereby forming an intralayer lens having a convex portion facing into the concave portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.