Semiconductor device and manufacturing method of the same
US7087957B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 14, 2005 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Jan 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/84
Abstract
A semiconductor device includes a compound semiconductor substrate, a channel layer provided on the compound semiconductor substrate, a buried layer provided on the channel layer, a first recess formed in the buried layer in an E-mode region, a second recess formed in the first recess in the E-mode region and another second recess formed in the buried layer in a D-mode region, and a gate electrode provided in the second recess in the E-mode region and another gate electrode provided in the second recess in the D-mode region, and a distance between a surface of the buried layer and a bottom of the second recess in the E-mode region is shorter than another distance between another surface of the buried layer and a bottom of said another second recess in the D-mode region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.