Patent · US Expired

Enhancing SNR and throughput performance of integrated circuits

US7088149B2 · kind B2 · utility

2Cited by

9References

29Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Anand Hariraj Udupa · Richardson, US
Visvesvaraya Pentakota · Bengaluru, IN
Shakti Shankar Rath · Bengaluru, IN
Gautam Salil Nandi · Kanchinakote, IN
Vineet Mishra · Bengaluru, IN
Ravishankar S. Ayyagari · Savanuru, IN
Nitin Agarwal · Bengaluru, IN

Key dates

Filing date	Nov 29, 2003
Grant date	Aug 8, 2006
Priority date	—
Expiry date	Nov 29, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH03F3/72
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Low voltage transistors are used in high voltage environment. The low voltage transistors may be used in the path of processing of a signal to increase the throughput performance. By using high voltage supply associated with the high voltage environment, a higher SNR may be attained. Various techniques are implemented to ensure that the low voltage transistors are not damaged by prolonged exposure to high voltages.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.