Semiconductor device and method for fabricating the same
US7089525B2 · kind B2 · utility
7Cited by
4References
7Claims
0Family size
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Key dates
| Filing date | Oct 21, 2003 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Aug 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The number of design processes for fabricating semiconductor devices can be reduced by parallel connection of a plurality of unit bipolar transistors Qu that are completely electrically isolated from each other in a semiconductor layer of an SOI substrate 1 to form a bipolar transistor having a large current capacity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.