Device for producing inductively coupled plasma and method thereof
US7090742B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2003 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Aug 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A device for producing inductively coupled plasma and method thereof, wherein a coil is uniformly and dispersedly arranged on a lateral wall in a chamber, instead of the prior device of a permanent magnet mounted on an external wall of the chamber, and the coil is so disposed as to allow a magnetic field formed from the coil to be mutually reinforced at a central portion of the coil, such that charged particles created inside the chamber are effectively isolated relative to the lateral wall of the chamber, thereby enabling to produce plasmas of high density and high uniformity. Intensity and frequency of power source applied to the coil are adjusted to enable to adjust the density and uniformity of plasmas produced in the chamber according to required process characteristics in etching or depositing process using plasmas such that flexibility is provided to the process using the plasmas and design of new process can be free from restriction calling for process chamber configure. The present invention is simplified in structure thereof because of a permanent magnet being dispensed with, to thereby reduce the manufacturing cost greatly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.