Method of making a single-crystal-silicon 3D micromirror
US7091057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2003 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | May 17, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B26/0866
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
First and second n-doped regions are formed at a surface of a p-doped single crystal silicon substrate. An aluminum layer is patterned overlying some of the second n-doped regions to form thermal actuators. A dielectric layer is deposited overlying the patterned aluminum layer and an underlying thermal oxide layer. A metal layer is deposited thereover and patterned to form bond pads to the thermal actuators and to form reflecting mirror surfaces overlying others of the second n-doped regions to form micromirrors. The substrate is etched away from the backside stopping at the first and second n-doped regions. Then the wafer is diced into mirror array chips. Portions of the first n-doped regions are etched away from the frontside to form flexible springs wherein the second n-doped regions covered by the patterned aluminum layer form thermal actuators and wherein the flexible springs connect the micromirrors to the thermal actuators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.