High voltage drain-extended transistor
US7091556B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2003 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Jan 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
The present invention provides, in one embodiment, a transistor (100). The transistor (100) comprises a doped semiconductor substrate (105) and a drain-extended well (115) having a curved region (125) and a straight region (130) surrounded by the doped semiconductor substrate (105). The drain-extended well (115) has an opposite dopant type as the doped semiconductor substrate (105). The transistor (100) further includes a centered source/drain (120) surrounded by the drain-extended well (115) and separated from an outer perimeter (135) of the drain-extended well (115). A separation in the curved region (145) is greater than a separation in the straight region (150). Other embodiments of the present invention include an integrated circuit (300) and a method of manufacturing a transistor (200).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.