Field effect transistor and method of manufacturing the same
US7091561B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2004 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Jun 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.