Integrated circuit memory devices having asynchronous flow-through capability
US7093083B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2005 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Aug 19, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Asynchronous memory devices utilize loopback circuitry to provide efficient and high speed “flow-through” of write data when conventional flow-through operations are not available. An exemplary memory device includes a memory array having first and second ports that can each support asynchronous read and write access and a first input/output control circuit. The first input/output control circuit is electrically coupled to the first port and includes a first sense amplifier, which is configured to receive read data from the first port, and a first bypass latch having an output coupled to the first sense amplifier. A second input/output control circuit is also provided. The second input/output control circuit is electrically coupled to the second port and includes a second sense amplifier, which is configured to receive read data from the second port, and a second bypass latch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.