Magnetic field sensor using magnetoresistance and method for making same
US7094480B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2001 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | Dec 11, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1157
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to magnetic field sensors in which magnetoresistance is used as the physical phenomenon for detecting and measuring the magnetic field. It consists in producing a stack comprising a first ferromagnetic layer (101), an insulating layer (103), a second ferromagnetic layer (102) and an antiferromagnetic layer (104). The two ferromagnetic layers exhibit crossed magnetic anisotropies and form with the insulating layer a tunnel junction. The anisotropy of the first layer is obtained from the shape energy of the substrate on which this first layer rests and which is slightly misoriented with respect thereto. The anisotropy of the second layer is obtained by the action of the antiferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.