Method of forming poly-silicon thin film transistors
US7094656B2 · kind B2 · utility
2Cited by
3References
13Claims
0Family size
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Key dates
| Filing date | Dec 11, 2003 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | Aug 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
Abstract
A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.