Carbon nanotube interconnect

US7094679B1 · kind B1 · utility

Assignee

• The United States of America as represented by the Administrator of the National Aeronautics and Space Administration · US

Inventors

• Jun Li · Norwood, US
• Meyya Meyyappan · San Jose, US

Key dates

• Filing date: Mar 11, 2003
• Grant date: Aug 22, 2006
• Expiry date: Mar 11, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/843
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Method and system for fabricating an electrical interconnect capable of supporting very high current densities (106–1010 Amps/cm2), using an array of one or more carbon nanotubes (CNTs). The CNT array is grown in a selected spaced apart pattern, preferably with multi-wall CNTs, and a selected insulating material, such as SiOw or SiuNv, is deposited using CVD to encapsulate each CNT in the array. An exposed surface of the insulating material is planarized to provide one or more exposed electrical contacts for one or more CNTs.