Multi-step plasma treatment method to improve CU interconnect electrical performance
US7094705B2 · kind B2 · utility
16Cited by
2References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 20, 2004 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | Jul 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for plasma treating an exposed copper surface and dielectric insulating layer in a semiconductor device manufacturing process including providing a semiconductor wafer having a process surface including an exposed copper portion and an exposed dielectric insulating layer portion; plasma treating in a first plasma treatment process, the process surface with a first plasma including ammonia (NH3) and nitrogen (N2) plasma to form a copper nitride layer overlying the exposed copper portion; and, plasma treating in a second plasma treatment process the process surface with a second plasma including oxygen (O2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.