Electron-emitting device and method of manufacturing the same and display apparatus using the same
US7095040B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2001 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | Jan 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/312
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron-emitting device includes an electron source layer made of a metal, a metal alloy or a semiconductor, an insulating layer formed on the electron source layer and a metal thin film electrode formed on the insulating layer. Electrons are emitted upon application of an electric field between the electron source layer and the metal thin film electrode. The insulating layer has at least one island region which constitutes an electron-emitting section in which the film thickness of the insulating layer is gradually reduced. The electron-emitting device further includes a carbon region made of carbon or a carbon compound on at least one of a top, bottom and inside of the island region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.