Patent · US Expired

Field effect transistors and materials and methods for their manufacture

US7095044B2 · kind B2 · utility

27Cited by
22References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 21, 2001
Grant dateAug 22, 2006
Priority date—
Expiry dateNov 23, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K85/631

Abstract

A field effect transistor in which a continuous semiconductor layer comprises:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.