Light emitter with a voltage dependent resistor layer
US7095765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2003 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | Apr 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitter includes an emitting stack, a first electrode, a second electrode and a voltage dependent resistor layer. The emitter stack has a first surface area and a second surface area. The first electrode is formed on the first surface area of the emitting stack. The second electrode is formed on the second surface area of the emitting stack. The voltage dependent resistor layer is connected to the first and second electrodes, and is formed during the formation of the light emitter thus improving the yield of the light emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.