Laser annealing apparatus
US7097709B2 · kind B2 · utility
9Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2002 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Feb 11, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/102
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A laser annealing apparatus for crystallizing a semiconductor film with a linearly radiating laser beam including a laser oscillator and laser optical systems for forming a laser beam radiated from the laser oscillator linearly, for application to a semiconductor film. Each linearly radiating laser beam from each laser optical system radiated onto the semiconductor film is arrayed almost linearly in a length direction, with an interval on the semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.