Surface emitting semiconductor laser and process for producing the same including forming an insulating layer on the lower reflector
US7098059B2 · kind B2 · utility
3Cited by
10References
17Claims
0Family size
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Key dates
| Filing date | Apr 20, 2005 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Apr 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser includes a substrate, a first semiconductor multilayer reflector formed on the substrate, an active region formed on the first semiconductor multilayer reflector, a second semiconductor multilayer reflector formed on the active region, a current confinement layer interposed between the first and second semiconductor multilayer reflectors and partially including an oxide region, and an insulating layer formed on a coated surface provided by a semiconductor layer which is part of the first semiconductor multilayer reflector and is revealed after removal of a surface oxidation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.