Forming interconnects using locally deposited solvents
US7098061B2 · kind B2 · utility
11Cited by
3References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2002 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Jun 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/621
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an electronic device, comprising: forming a first conductive or semiconductive layer; forming a sequence of at least on insulating layer and at least one semiconducting layer over the first conductive or semiconductive layer; locally depositing solvents at a localised region of the insulating layer so as to dissolve the sequence of insulating and semiconducting layers in the region to leave a void extending through the sequence of layer; and depositing conductive or semiconductive material in the void.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.