Method of manufacturing carbon nanotube semiconductor device
US7098151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2003 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Aug 1, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of controlling an alignment direction of CNTs in manufacturing a carbon nanotube semiconductor device using the CNTs for a channel region formed between a source electrode and a drain electrode. In manufacturing a carbon nanotube semiconductor device including a gate electrode, a gate insulating film, a source electrode, a drain electrode, a CNT layer formed between the source electrode and the drain electrode in contact therewith, the method conducts: dropping a CNT solution obtained by dispersing CNTs in a solvent onto a region between the source electrode and the drain electrode while an alternating current voltage is applied between the source electrode and the drain electrode; and removing the solvent to control an orientation of the CNTs in the CNT layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.