Method for fabricating semiconductor device and semiconductor device
US7098154B2 · kind B2 · utility
30Cited by
6References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 10, 2004 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Mar 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Part of a first oxide film formed by thermal oxidation is removed by etching. A second oxide film is formed in the part of substrate from which the first oxide film has been removed using heated nitric acid. The two oxide films are nitrided by a nitrogen plasma having a low energy so as to be first and second gate insulating films, i.e., oxynitride films, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.