GaN DHFET

US7098490B2 · kind B2 · utility

Assignee

• HRL Laboratories, LLC · US

Inventors

• Miroslav Micovic · Thousand Oaks, US
• Tahir Hussain · Calabasas, US
• Paul Hashimoto · Los Angeles, US
• Peter W. Deelman · Calabasas, US

Key dates

• Filing date: Apr 26, 2004
• Grant date: Aug 29, 2006
• Expiry date: Jun 4, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

The present invention provides a GaN based DHFET that helps confine the 2DEG to the channel layer, and reduces the 2DHG. The present invention provides a GaN DHFET having a channel layer comprising GaN and a buffer layer comprising AlxGa1−xN. The Al content in the buffer layer is specifically chosen based on the thickness of the channel layer using a graph. By choosing the Al content in the buffer layer and thickness of the channel layer in accordance with the graph provided in the present invention, the ability of the buffer layer to help confine the 2DEG to the channel layer is improved.