MRAM in-pixel memory for display devices
US7098493B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2003 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Jun 4, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2310/0262
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises memory elements, for storing a drive setting, and a read-out circuit, for example a flip-flop circuit (64), for reading-out the stored drive setting. The memory elements comprise two MRAMs (60, 62), each coupled to a respective input of the flip-flop circuit (64). A drive circuit (26) is coupled to the read-out circuit and a pixel display electrode (27) for driving the pixel display electrode (27) dependent upon the read-out drive setting with drive current that does not pass through the MRAMs (60, 62). A display device (1) is provided comprising a plurality of pixels (20) each associated with one such memory circuit (25) and drive circuit (26).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.