Thin capacitive structure
US7098501B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2003 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Jul 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor structure in a semiconductor device is provided. The capacitor structure includes a first power rail on a topmost level of the semiconductor device, and a second power rail on the topmost level of the semiconductor device. The capacitor structure also includes a dielectric layer disposed over at least a portion of one of the first power rail and the second power rail. The capacitor structure further includes a conductive layer disposed over and between the first power rail and the second power rail where the conductive layer is in electrical contact with the power rail not having the dielectric layer, and the conductive layer is disposed over the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.