Semiconductor device
US7098517B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 19, 2004 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Aug 19, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B26/0841
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device has a first substrate and a second substrate. The first substrate has first electrodes on at least one surface. The second substrate has concave portions on a surface, and second electrodes provided on bottom surfaces of the concave portions. The semiconductor device further has metallic members located between the first electrodes of the first substrate and the second electrodes of the second substrate. The metallic members have a height greater than a depth of the concave portions of the second substrate, and electrically and mechanically bond the first electrodes of the first substrate and the second electrodes of the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.