Avalanche radiation detector
US7098519B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2005 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | May 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/225
Abstract
The invention relates to an avalanche radiation detector comprising a semiconductor substrate (HK) with a front side (VS) and a back side (RS), an avalanche region (AB) which is arranged in the semiconductor substrate (HK) on the front side (VS) of the semiconductor substrate (HK) and a control electrode (R) for adjusting the electric field strength in the avalanche region (AB). It is proposed that the control electrode (R) is also arranged on the front side of the semiconductor substrate (HK).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.