Magnetic random access memory
US7099184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2003 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Aug 12, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An improved magnetic random access memory (MRAM) has two sets of signal lines where each set is substantially perpendicular to the other, and memory cells located at the intersections of the signal lines. Each memory cell has a magneto-resistant element containing a magnetization layer whose magnetic characteristics change depending on the intensity of the magnetic field applied. A desired magnetic field can be applied to any cell by supplying appropriate write currents to the signal lines intersecting at that cell. The relationship between applied magnetic fields, two different threshold function values, and four different magnetic fields that result at each cell is disclosed. Better performance, namely, improved selectivity and a more stable write operation, results.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.