Method for obtaining synthesis gas by partial catalytic oxidation
US7101494B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2002 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Dec 9, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P20/52
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The invention relates to a method for obtaining synthesis gas by partial catalytic oxidation, consisting in bringing a hydrocarbon in a gaseous state into contact with an oxidizing gas, and therefore possibly a small amount of water vapor, in the presence of a catalyst comprising at least one silicon carbide at a temperature of more than 800° C. According to the invention, the silicon carbide has a specific surface which is determined by the BET method and which is less than or equal to 100 m2/g, the contact time between the mixture of gaseous hydrocarbon, oxidizing gas and silicon carbide being more than 0.05 seconds and the pressure inside the reactor being greater than atmospheric pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.