Method for forming a schottky diode on a silicon carbide substrate
US7101739B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 20, 2002 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Mar 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/105
Abstract
A method for manufacturing a vertical Schottky diode with a guard ring on a lightly-doped N-type silicon carbide layer, including forming a P-type epitaxial layer on the N-type layer; implanting N-type dopants in areas of the P-type epitaxial layer to neutralize in these areas, across the entire thickness of the epitaxial layer, the P-type dopants to form N-type regions, of dopant concentration lower than that of the epitaxial layer, and delimiting a P-type guard ring; forming on the external periphery of the component an insulating layer partially covering the guard ring; and forming a Schottky contact with the N-type region internal to the guard ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.