Method for manufacturing a semiconductor device and method for forming high-dielectric-constant film
US7101753B2 · kind B2 · utility
11Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2004 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Mar 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a gate electrode on a silicon substrate via a gate insulating film is formed by laminating the gate insulating film with a silicon oxide film, formed on the silicon substrate, an Hf silicate film is formed on the silicon oxide film, and a nitrogen-containing Hf silicate film formed on the Hf silicate film, and containing Hf in a peak concentration in a range from one atomic % to thirty atomic %, and nitrogen in a peak concentration in a range from ten atomic % to thirty atomic %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.