Transparent article having protective silicon nitride film
US7101810B2 · kind B2 · utility
77Cited by
70References
18Claims
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Key dates
| Filing date | Apr 7, 2005 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Apr 7, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Transparent articles comprising transparent, nonmetallic substrate and a transparent film stack is sputter deposited on the substrate. The film stack is characterized by including at least one infrared reflective metal film, a dielectric film over the metal film, and a protective silicon nitride film of 10 Å to 150 Å in thickness over the said dielectric film. The dielectric film desirably has substantially the same index of refraction as does silicon nitride and is contiguous with the silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.