Lightshield architecture for interline transfer image sensors
US7102185B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2004 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Jun 21, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.