Semiconductor device including first and second transistor groups and semiconductor integrated circuit device
US7102197B2 · kind B2 · utility
1Cited by
2References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 30, 2004 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Feb 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
A salicide block area is provided around a gate electrode. Polysilicon coupling portions are formed, which extend at plurality of points from the gate electrode to an area outside of an active region. A contact provided at this inactive region electrically connects the gate electrode to gate electrode metal wiring, which is provided above the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.