High side switching circuit
US7102416B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 29, 2004 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Jul 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high side switching circuit, comprising: a switching transistor; a charge pump drive circuit including a circuit for generating an oscillating signal; and a charge pump arranged to provide a gate drive voltage to the switching transistor in response to a control signal; wherein the charge pump is driven by the charge pump drive circuit, and the circuit for generating an oscillating signal comprises: an oscillator having a power supply input and first and second outputs, outputting first and second pulse trains respectively of the same frequency but out of phase such that when the first pulse train is high, the second pulse train is low and when the second pulse train is high, the first pulse train is low; first and second transistors connected in series with the drain of the first transistor connected to a high voltage input relative to the high level of the first and second pulse train pulses, the source of the first transistor connected to the drain of the second transistor, the source of the second transistor connected to a voltage input less than or equal to the low level of the first and second pulse train pulses, the gate of the first transistor being connected to the first…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.