Patent · US Expired

Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor

US7105370B2 · kind B2 · utility

11Cited by

31References

38Claims

0Family size

Assignee

OSRAM GmbH · DE

Inventors

Stefan Bader · Fort Collins, US
Michael Fehrer · Bad Abbach, DE
Berthold Hahn · Hemau, DE
Volker Harle · Hemau, DE
Hans-Jürgen Lugauer · Sinzing, DE

Key dates

Filing date	Dec 20, 2004
Grant date	Sep 12, 2006
Priority date	—
Expiry date	Dec 20, 2024

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/34333
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III–V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.