Contact process and structure for a semiconductor device
US7105410B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2004 |
| Grant date | Sep 12, 2006 |
| Priority date | — |
| Expiry date | Apr 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact process for a semiconductor device containing a base region of a first conductivity type formed on a semiconductor substrate comprises formation of a first shallow layer of the first conductivity type on the base region, deposition of an insulator on the first shallow layer, etching the insulator and first shallow layer to form a contact hole, thermally driving the first shallow layer more deeply into said base region, formation of a second shallow layer of a second conductivity type on the base region at the bottom of the contact hole, filling a metal in the contact hole to contact the sidewall of the first shallow layer and the second shallow layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.