Semiconductor detector with optimised radiation entry window

US7105827B2 · kind B2 · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Peter Lechner · Vaterstetten, DE
• Gerhard Lutz · Munich, DE
• Lothar Strueder · Munich, DE

Key dates

• Filing date: Dec 19, 2003
• Grant date: Sep 12, 2006
• Expiry date: Oct 11, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/2441

Abstract

Described is a semiconductor detector for detecting electromagnetic radiation or particle radiation, comprising a semiconductor body (10) of a first conduction type, comprising first and second main surfaces; a group of drift electrodes comprising a second, opposite, conduction type, with said drift electrodes being arranged on the first main surface for generating at least one drift field in the semiconductor body (10); and a counterelectrode arrangement (30) which is arranged on the second main surface, which comprises the second conduction type and which forms a radiation entry window, wherein the counterelectrode arrangement (30) comprises a two-dimensional main electrode (31) and at least one barrier electrode (32) which are electrically insulated from each other, and wherein the barrier electrode (32), of which there is at least one, is connected to a voltage source (50) and is designed such that a blocking voltage is applied to it relative to the semiconductor body (10), with said blocking voltage exceeding the blocking voltage of the main electrode (31).