Doping of source-drain contacts
US7105854B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2003 |
| Grant date | Sep 12, 2006 |
| Priority date | — |
| Expiry date | Mar 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an electronic device on a substrate, the device including a first electrically conductive region, a second electrically conductive region spaced from the first electrically conductive region and a region of an semiconductor material between the first and second electrically conductive regions and in contact with the first electrically conductive region, the method comprising doping an interfacial zone comprising least part of the periphery of the semiconductor material at the interface between the semiconductor material and the first electrically conductive region by means of a dopant contained in the first conductive material and capable of doping the semiconducting material so as to thereby enhance the conductivity of the interfacial zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.