Active pixel having reduced dark current in a CMOS image sensor
US7105878B2 · kind B2 · utility
3Cited by
10References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2004 |
| Grant date | Sep 12, 2006 |
| Priority date | — |
| Expiry date | Oct 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
The active pixel includes a photodiode, a reset transistor, and a pixel output transistor. The photodiode is substantially covered with a protective structure, thus protecting the entire surface of the photodiode from damage. This substantially eliminates potential leakage current sources, which result in dark current. The protective structure has a photodiode contact formed therein to electrically connect the photodiode to the pixel output transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.