Thin film transistor, TFT substrate and liquid crystal display unit
US7105905B2 · kind B2 · utility
2Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2003 |
| Grant date | Sep 12, 2006 |
| Priority date | — |
| Expiry date | May 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor is provided including an active layer, in which a source region and drain region are formed, a first light-shielding film shielding a light incident on the active layer, and a second light-shielding film between the active layer and the first shielding film. A carrier concentration of at least surface portion of the second light-shielding film which opposes the active layer is about 1017/cm3 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.