Tundish and method for production of a metal strip of high purity
US7108048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2002 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Jan 18, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB22D41/08
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
To achieve the highest possible separation rate for foreign particles in a tundish combined, at the same time, with a minimized level of inclusions, the refractory-lined interior space of the tundish, as a function of an operating bath level (h), satisfies the condition that a dimensionless ratio (κ) of the refractory-lined surface area (Aref) to the filling volume (V) which is delimited by this refractory-lined surface area and the bath-level-dependent exposed surface area (ATop) and results from the relationshipbe between 3.83 and 4.39.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.