Semiconductor light emitting device and fabrication method thereof
US7109048B2 · kind B2 · utility
11Cited by
2References
28Claims
0Family size
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Key dates
| Filing date | Sep 28, 2004 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Sep 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8316
Abstract
A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.