Apparatus and methods for two-dimensional ion beam profiling
US7109499B2 · kind B2 · utility
7Cited by
11References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2004 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Nov 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus are provided for measuring a profile of an ion beam. The apparatus includes an array of beam current sensors, each producing a sensor signal in response to incident ions of the ion beam, a translation mechanism configured to translate the array of beam current sensors along a translation path with respect to the ion beam, and a controller configured to acquire the sensor signals produced by the beam current sensors at a plurality of positions along the translation path, wherein the acquired sensor signals are representative of a two-dimensional profile of the ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.