Mask pattern correction method, semiconductor device manufacturing method, mask manufacturing method and mask
US7109500B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2003 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Sep 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31794
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask pattern correction method capable of preventing a position of a pattern from deviating by deformation of a mask due to gravity, a mask production method, a mask, and a production method of a semiconductor device capable of forming a fine pattern with high accuracy are provided. A mask pattern correction method, a mask production method, a mask produced thereby and a production method of a semiconductor device using the mask include a step of creating first position data indicating positions of a plurality of marks when supporting a first thin film having the marks in a state where a first surface directs upward, a step of creating second position data indicating mark positions when supporting the first thin film in a state where a second surface directs upward, a step of obtaining a transfer function for converting the first position data to the second position data, and a step of correcting a mask pattern as a shape of exposure beam transmission portions formed on a second thin film by using an inverse function of the transfer function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.