Semiconductor device including n-channel fets and p-channel fets with improved drain current characteristics
US7109568B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2003 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Sep 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
In a semiconductor device including n-channel field-effect transistors and p-channel field-effect transistors, in which the channel direction is parallel to a axis, a semiconductor device in provided which has excellent drain current characteristics at both n-channel field-effect transistors and p-channel field-effect transistors. In a semiconductor device including n-channel field-effect transistors N1 and N2 and p-channel field-effect transistors P1 and P2, a stress control film that covers the gate electrodes of the n-channel and p-channel field-effect transistors from upper surfaces thereof is not formed, or is made thin, above shallow trench isolations adjacent to active regions formed by the p-channel field-effect transistors P1 and P2, in a case where the stress control film is a tensile film stress. Thus, improvement of the drain currents of both the n-channel and p-channel transistors can be expected. For this reason, it is possible to improve overall characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.