Magnetic thin film sensor based on the extraordinary hall effect
US7110216B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 20, 2004 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Sep 4, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49004
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magnetic field sensor, including an insulating substrate and a conductive thin film deposited on the substrate. The thin film consists of a material having an extraordinary Hall coefficient, the thin film also has a resistivity and a film thickness no greater than a threshold thickness at which the resistivity is substantially equal to 150% of a bulk resistivity of the material. The sensor also includes conductors coupled to the thin film for injecting a current into the film and measuring a voltage generated across the thin film responsive to the injected current. Devices having other types of thin films, including homogeneous and non-homogeneous films, the films having enhanced extraordinary Hall coefficients, are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.