Porous material formation by chemical vapor deposition onto colloidal crystal templates
US7112615B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2003 |
| Grant date | Sep 26, 2006 |
| Priority date | — |
| Expiry date | Aug 26, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/96
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and systems are disclosed for fabricating ultra-low dielectric constant porous materials. In one aspect of the invention, a method for making porous low-k films is disclosed. The method uses polymer based porogens as sacrificial templates around which a chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD) deposited matrix is formed. Upon pyrolysis, the porogens decompose resulting in a porous ultra-low dielectric material. This method can be used, for example, to produce porous organosilicate glass (OSG) materials, ultra-low dielectric nanoporous materials, porous ceramics, porous scaffolds, and/or porous metals. Various uses and embodiments of the methods and systems of this invention are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.