Semiconductor device with transistor and capacitor and its manufacture method
US7112839B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 14, 2004 |
| Grant date | Sep 26, 2006 |
| Priority date | — |
| Expiry date | Jan 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a semiconductor substrate, a transistor and a capacitor electrically connected to the transistor are formed, the capacitor having two electrodes made of metal and a capacitor dielectric layer between the two electrodes made of oxide dielectric material. A temporary protective film is formed over the capacitor, the temporary protective film covering the capacitor. The semiconductor substrate with the temporary protective film is subjected to a heat treatment in a reducing atmosphere. The temporary protective film is removed. The semiconductor substrate with the temporary protective film removed is subjected to a heat treatment in an inert gas atmosphere or in a vacuum state. A protective film is formed over the capacitor, the protective film covering the capacitor. With these processes, leak current of the capacitor can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.