Patent · US Expired

Sense amplifier systems and a matrix-addressable memory device provided therewith

US7113437B2 · kind B2 · utility

35Cited by

12References

20Claims

0Family size

Assignee

Thin Film Electronics ASA · NO

Inventors

Robert Karl Schweickert · North Palm Beach, US
Geirr I. Leistand · Oslo, NO

Key dates

Filing date	Mar 25, 2004
Grant date	Sep 26, 2006
Priority date	—
Expiry date	May 6, 2024

Classification

Technology area (CPC G)Physics
CPC primaryG11C2207/063
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A charge sensing device with a sense amplifier system implemented in a non-volatile matrix-addressable memory device comprising an electrical polarizable dielectric memory material exhibiting hysteresis, particularly a ferroelectric or electret material. The memory cells of the memory device can be selectively addressed for a write/read operation and the sense amplifier system is used for readout of polarization states of the memory cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.